G40H120DF2 IGBT HY3215W MOSFET price in pakistan easy to trace
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G40H120DF2 IGBT HY3215W MOSFET price in pakistan easy to traceType: IGBT + Anti Parallel Diode Marking Code: G40H120DF2 Type of IGBT Channel: N Pc Maximum Power Dissipation: 468 W Vce Maximum Collector Emitter Voltage: 1200 V Vge Maximum Gate Emitter Voltage: 20 V Ic Maximum Collector Current: 40 A @25 VCEsat Collector Emitter saturation Voltage, typ: 2. 4 V @25 VGEth Maximum G E Threshold Voltag: 7 V Tj Maximum Junction Temperature: 175 tr Rise Time, typ: 37 nS Coes Output Capacitance, typ: 220 pF Qg Total Gate
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